BFG541_2015 Datasheet, PDF (9/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG541
handbook, full pagewidth
135°
0.5
0.2
90°
1
3 GHz
0.2
0.5
1
180° 0
1.0
2
45°
0.8
0.6
0.4
5
0.2
2
5
0° 0
40 MHz
0.2
5
I_C = 40 mA; V_CE = 8 V.
Z_o = 50 Ω.
0.5
−135°
1
−90°
2
−45°
MRA662
1.0
Fig.16 Common emitter input reflection coefficient (S₁₁).
handbook, full pagewidth
90°
135°
40 MHz
180°
50 40 30 20 10
3 GHz
45°
0°
I_C = 40 mA; V_CE = 8 V.
−135°
−45°
−90°
MRA663
Fig.17 Common emitter forward transmission coefficient (S₂₁).
September 1995
9