BFG541_2015 Datasheet, PDF(4/12 Page) Quanzhou Jinmei Electronic Co.,Ltd.

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BFG541_2015 Datasheet, PDF (4/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

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Philips Semiconductors

NPN 9 GHz wideband transistor

Product speciï¬cation

BFG541

CHARACTERISTICS

Tj = 25 Â°C unless otherwise speciï¬ed.

SYMBOL

PARAMETER

ICBO

collector cut-off current

hFE

DC current gain

emitter capacitance

collector capacitance

Cre

feedback capacitance

transition frequency

GUM

maximum unilateral power gain

(note 1)

ï£·S21ï£¯2

insertion power gain

noise ï¬gure

PL1

output power at 1 dB gain

compression

ITO

third order intercept point

output voltage

second order intermodulation

distortion

CONDITIONS

IE = 0; VCB = 8 V

IC = 40 mA; VCE = 8 V

IC = ic = 0; VEB = 0.5 V; f = 1 MHz

IE = ie = 0; VCB = 8 V; f = 1 MHz

IC = 0; VCB = 8 V; f = 1 MHz

IC = 40 mA; VCE = 8 V; f = 1 GHz;

Tamb = 25 Â°C

IC = 40 mA; VCE = 8 V; f = 900 MHz;

Tamb = 25 Â°C

IC = 40 mA; VCE = 8 V; f = 2 GHz;

Tamb = 25 Â°C

Ic = 40 mA; VCE = 8 V; f = 900 MHz;

Tamb = 25 Â°C

Îs = Îopt; IC = 10 mA; VCE = 8 V;

f = 900 MHz; Tamb = 25 Â°C

Îs = Îopt; IC = 40 mA; VCE = 8 V;

f = 900 MHz; Tamb = 25 Â°C

Îs = Îopt; IC = 10 mA; VCE = 8 V;

f = 2 GHz; Tamb = 25 Â°C

Ic = 40 mA; VCE = 8 V; RL = 50 â¦;

f = 900 MHz; Tamb = 25 Â°C

note 2

note 3

note 4

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

GUM = 10 log ï£ï£«----1-----â------S----1---1----2S---ï£¸ï£¶-2--ï£ï£«-1---1-2----â------S----2--2-----2--ï£¸ï£¶-- dB.

2. IC = 40 mA; VCE = 8 V; RL = 50 â¦; f = 900 MHz; Tamb = 25 Â°C;

fp = 900 MHz; fq = 902 MHz;

measured at f(2pâq) = 898 MHz and at f(2pâq) = 904 MHz.

MIN. TYP. MAX. UNIT

50 nA

60 120 250

0.7 â

GHz

15 â

13 14 â

1.3 1.8 dB

1.9 2.4 dB

2.1 â

21 â

dBm

34 â

500 â

â50 â

dBm

3. dim = â60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = Zs = 75 â¦; Tamb = 25 Â°C;

Vp = Vo; Vq = Vo â6 dB; Vr = Vo â6 dB;

fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;

measured at f(p+qâr) = 793.25 MHz

4. IC = 40 mA; VCE = 8 V; Vo = 325 mV; Tamb = 25 Â°C;

fp = 250 MHz; fq = 560 MHz;

measured at f(p+q) = 810 MHz

September 1995

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