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BFG541_2015 Datasheet, PDF (7/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor | |||
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product speciï¬cation
BFG541
handbooâk,2h0alfpage
d im
(dB)
â30
MEA977
â40
â50
â60
â70
10
20
30
40
50
60
I C (mA)
Fig.10 Intermodulation distortion as a function of
collector current.
handbooâk,2h0alfpage
d2
(dB)
â30
MEA976
â40
â50
â60
â70
10
20
30
40
50
60
I C (mA)
Fig.11 Second order intermodulation distortion as
a function of collector current.
5
handbook, halfpage
Fmin
(dB)
4
3
2000 MHz
2
1000 MHz
900 MHz
1
500 MHz
Gass
Fmin
MRA666 20
Gass
(dB)
f = 900 MHz 15
1000 MHz
10
2000 MHz
5
0
0
1
VCE = 8 V.
â5
10
IC (mA)
100
Fig.12 Minimum noise figure and associated
available gain as functions of collector
current.
5
handboFomk,inhalfpageIC =10 mA
(dB)
4
40 mA
Gass
3
MRA667
20
Gass
(dB)
15
10
2
5
40 mA
Fmin
1 10 mA
0
0
102
VCE = 8 V.
â5
103
f (MHz)
104
Fig.13 Minimum noise figure and associated
available gain as functions of frequency.
September 1995
7
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