BFG541_2015 Datasheet, PDF (8/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG541
handbook, full pagewidth
I_C = 10 mA; V_CE = 8 V;
Z_o = 50 Ω; f = 900 MHz.
90°
1
135°
0.5
G = 13 dB
0.2 _{G = 14 dB}
Fmin =
1.3 dB
180°
G = 15 dB
Γ_0M.2S
0
Γ_OPT
0.5
1
2
Gmax = 15.3 dB
F = 1.5 dB
0.2
F = 2 dB
0.5
−135°
F = 3 dB
1
−90°
2
45°
5
5
1.0
0.8
0.6
0.4
0.2
0° 0
5
2
−45°
MRA668
1.0
Fig.14 Noise circle figure.
handbook, full pagewidth
I_C = 10 mA; V_CE = 8 V;
Z_o = 50 Ω; f = 2 GHz.
September 1995
90°
1
135°
0.2
0.5
G = 7 dB
Γ_MS G = 8 dB G = 6 dB
Gmax = 8.5 dB
0.2
0.5
1
2
180° 0
0.2
−135°
Γ_OPT
Fmin = 2.1 dB
F = 2.5 dB
F = 3 dB
0.5
F = 4 dB
1
−90°
2
45°
5
5
1.0
0.8
0.6
0.4
0.2
0° 0
5
2
−45°
MRA669
1.0
Fig.15 Noise circle figure.
8