BFG541_2015 Datasheet, PDF (3/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG541
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CES
I_C
P_tot
h_FE
C_re
f_T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
G_UM
maximum unilateral power gain
S₂₁²
F
P_L1
ITO
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter
R_BE = 0
−
−
20
V
−
−
15
V
−
−
120 mA
up to T_s = 140 °C; note 1
−
I_C = 40 mA; V_CE = 8 V; T_j = 25 °C 60
I_C = 0; V_CB = 8 V; f = 1 MHz
−
I_C = 40 mA; V_CE = 8 V; f = 1 GHz;
−
T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 900 MHz; −
T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 2 GHz;
−
T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 900 MHz; 13
T_amb = 25 °C
Γ_s = Γ_opt; I_C = 10 mA; V_CE = 8 V;
−
f = 900 MHz; T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; R_L = 50 Ω; −
f = 900 MHz; T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; R_L = 50 Ω; −
f = 900 MHz; T_amb = 25 °C
−
650
120 250
0.7 −
9
−
mW
pF
GHz
15 −
dB
9
−
dB
14 −
dB
1.3 1.8 dB
21 −
dBm
34 −
dBm
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V_CBO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
R_BE = 0
open collector
up to T_s = 140 °C; note 1
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
2.5
120
650
150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL RESISTANCE
SYMBOL
R_{th j-s}
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T_s = 140 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
55 K/W
September 1995
3