BFG541_2015 Datasheet, PDF (5/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG541
1000
handbook, halfpage
Ptot
(mW)
800
600
400
200
MRA654 - 1
0
0
50
100
150
200
Ts (^o C)
V_CE ≤ 10 V.
Fig.2 Power derating curve.
250
handbook, halfpage
hFE
200
MRA655
150
100
50
0
10^−2
10^−1
1
10
10²
IC (mA)
V_CE = 8 V; T_j = 25 °C.
Fig.3 DC current gain as a function of collector
current.
1.0
handbook, halfpage
Cre
(pF)
0.8
MRA656
0.6
0.4
0.2
0
0
4
I_C = 0; f = 1 MHz.
8
12
VCB (V)
Fig.4 Feedback capacitance as a function of
collector-base voltage.
September 1995
12
handbook, halfpage
fT
(GHz)
8
MRA657
VCE = 8 V
4V
4
0
10^−1
1
f = 1 GHz; T_amb = 25 °C.
10
10²
IC (mA)
Fig.5 Transition frequency as a function of
collector current.
5