BFG480W_2015 Datasheet, PDF (9/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN wideband transistor

Philips Semiconductors
NPN wideband transistor
Preliminary specification
BFG480W
Noise data
V_CE = 2 V; typical values.
f
I_C
(MHz) (mA)
F_min
(dB)
900
2
1.1
4
1.1
6
1.2
8
1.2
10
1.3
20
1.6
40
2.0
60
2.3
80
2.9
2000 2
2.4
4
2.0
6
1.8
8
1.8
10
1.8
12
1.8
14
1.8
20
1.9
40
2.3
60
2.6
80
2.8
Γ_mag
0.41
0.31
0.27
0.26
0.28
0.39
0.49
0.57
0.45
0.57
0.49
0.46
0.44
0.43
0.44
0.44
0.46
0.52
0.56
0.60
Γ_angle
96.1
106.6
118.4
131.7
143.2
166.2
176.0
179.5
177.3
171.9
178.9
−175.7
−171.7
−168.4
−165.3
−163.7
−158.3
−150.2
−147.7
−146.1
r_n
(Ω)
0.21
0.14
0.12
0.10
0.10
0.07
0.07
0.07
0.18
0.09
0.08
0.09
0.09
0.09
0.10
0.10
0.11
0.14
0.18
0.22
4
Fmin
(dB)
3
2
2 GHz
900MHz
1
0
0
20
40
60
80
IC (mA)
V_CE = 2 V.
Fig.13 Minimum noise figure as a function of the
collector current; typical values.
APPLICATION INFORMATION
RF performance at T_s ≤ 60 °C in a common emitter test circuit (see Figs 18 and 19).
MODE OF OPERATION
f
V_CE
(GHz)
(V)
I_CQ
(mA)
P_L
(mW)
Pulsed; class-AB; δ < 1 : 2; t_p = 5 ms
2
3.6
1
100
G_p
(dB)
typ. 13.5
η_C
(%)
typ. 45
1998 Jul 09
9