BFG480W_2015 Datasheet, PDF (2/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN wideband transistor

Philips Semiconductors
NPN wideband transistor
Preliminary specification
BFG480W
FEATURES
• High power gain
• High efficiency
• Low noise figure
• High transition frequency
• Emitter is thermal lead
• Low feedback capacitance
• Linear and non-linear operation.
APPLICATIONS
• RF front end with high linearity system demands
(CDMA)
• Common emitter class AB driver.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
handbook, halfpage
3
4
2
Top view
1
MSB842
Marking code: P6.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V_CEO
I_C
P_tot
f_T
G_max
F
G_P
η_C
collector-emitter voltage open base
−
collector current (DC)
−
total power dissipation T_s ≤ 60 °C
−
transition frequency
I_C = 80 mA; V_CE = 2 V; f = 2 GHz; T_amb = 25 °C −
maximum gain
I_C = 80 mA; V_CE = 2 V; f = 2 GHz; T_amb = 25 °C −
noise figure
I_C = 8 mA; V_CE = 2 V; f = 2 GHz; Γ_S = Γ_opt
−
power gain
Pulsed; class-AB; δ < 1 : 2; t_p = 5 ms;
12
V_CE = 3.6 V; f = 2 GHz; P_L = 100 mW
collector efficiency
Pulsed; class-AB; δ < 1 : 2; t_p = 5 ms;
40
V_CE = 3.6 V; f = 2 GHz; P_L = 100 mW
−
4.5 V
80 250 mA
−
360 mW
23 −
GHz
16 −
dB
1.8 −
dB
−
−
dB
−
−
%
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
1998 Jul 09
2