BFG480W_2015 Datasheet, PDF (6/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN wideband transistor

Philips Semiconductors
NPN wideband transistor
Preliminary specification
BFG480W
20
gain
(dB)
16
12
8
4
0
0
Gmax
S21
40
80
120
160
IC (mA)
V_CE = 2 V; f = 2 GHz.
Fig.7 Gain as a function of collector current;
typical values.
50
gain
(dB)
40
30
20
10
0
10
MSG
S21
Gmax
100
1000
10000
f (MHz)
I_C = 80 mA; V_CE = 2 V.
Fig.8 Gain as a function of frequency;
typical values.
1998 Jul 09
6