BFG480W_2015 Datasheet, PDF (3/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN wideband transistor

Philips Semiconductors
NPN wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
open emitter
open base
open collector
T_s ≤ 60 °C; note 1; see Fig.2
Note
1. T_s is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to soldering point
Preliminary specification
BFG480W
MIN.
−
−
−
−
−
−65
−
MAX.
14.5
4.5
1
250
360
+150
150
UNIT
V
V
V
mA
mW
°C
°C
VALUE
250
UNIT
K/W
500
Ptot
(mW)
400
300
200
100
0
0
40
80
120
160
TS (°C)
Fig.2 Power derating curve.
1998 Jul 09
3