BFG480W_2015 Datasheet, PDF (10/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN wideband transistor

Philips Semiconductors
NPN wideband transistor
Preliminary specification
BFG480W
16
GP
(dB)
12
8
GP
η_C
80
η_C
(%)
60
40
4
20
0
0
10
14
18
22
26
PL (dBm)
Pulsed, class-AB operation; δ < 1 ; 2; t_p = 5 ms.
f = 2 GHz; V_CE = 2.4 V; I_CQ = 1 mA; tuned at P_L = 100 mW.
Fig.14 Power gain and collector efficiency as a
function of the load power; typical values.
handbook,¹h⁶alfpage
GP
(dB)
GP
12
MGL456
80
η_C
(%)
60
8
40
η_C
4
20
0
0
10
14
18
22
26
PL (dBm)
Pulsed, class-AB operation; δ < 1 ; 2; t_p = 5 ms.
f = 2 GHz; V_CE = 3.6 V; I_CQ = 1 mA; tuned at P_L = 100 mW.
Fig.15 Power gain and collector efficiency as a
function of the load power; typical values.
10
Zi
(Ω)
8
6
4
2
0
1.8
r_i
x_i
1.85
1.9
1.95
2
f (GHz)
30
ZL
(Ω)
RL
20
10
0
1.8
1.85
XL
1.9
1.95
2
f (GHz)
V_CE = 3.6 V; I_CQ = 1 mA; P_L = 100 mW; T_s ≤ 60 °C.
Fig.16 Input impedance as function of frequency
(series components); typical values.
V_CE = 3.6 V; I_CQ = 1 mA; P_L = 100 mW; T_s ≤ 60 °C.
Fig.17 Load impedance as a function of frequency
(series components); typical values.
1998 Jul 09
10