BFG480W_2015 Datasheet, PDF (5/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN wideband transistor

Philips Semiconductors
NPN wideband transistor
Preliminary specification
BFG480W
100
h_FE
80
60
40
20
0
0
50
100
150
IC (mA)
V_CE = 2 V.
Fig.3 DC current gain as a function of collector
current; typical values.
800
Cre
(pF)
600
400
200
0
0
1
2
3
4
5
VCB (V)
I_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
30
f_T
(GHz)
20
30
gain
(dB)
20
MSG
S21
Gmax
10
10
0
10
100
1000
IC (mA)
f = 2 GHz; V_CE = 2 V; T_amb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
1998 Jul 09
0
0
40
80
120
160
IC (mA)
f = 900 MHz; V_CE = 2 V.
Fig.6 Gain as a function of collector current;
typical values.
5