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BFG35_2015 Datasheet, PDF (8/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 4 GHz wideband transistor
Philips Semiconductors
NPN 4 GHz wideband transistor
handbook,4h5alfpage
d2
(dB)
50
MBB384
55
60
65
70
20
40
60
80
100
120
I C (mA)
VCE = 10 V; Vo = 50 dBmV; f(p+q) = 810 MHz; Tamb = 25 °C.
Fig.12 Second order intermodulation distortion as
a function of collector current.
Product specification
BFG35
1999 Aug 24
8