BFG35_2015 Datasheet, PDF (7/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 4 GHz wideband transistor

Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFG35
handbook,⁴h⁰alfpage
G _UM
(dB)
30
MBB386
20
10
0
10
10²
10³ _{f (MHz)} 10⁴
I_C = 100 mA; V_CE = 10 V; T_amb = 25 °C.
Fig.8 Maximum unilateral power gain as a
function of frequency.
handbook,⁴h⁵alfpage
d _im
(dB)
50
MBB385
55
60
65
70
20
40
60
80
100
120
I _C (mA)
V_CE = 10 V; V_o = 800 mV; f_(p+q−r) = 443.25 MHz; T_amb = 25 °C.
Fig.9 Intermodulation distortion as a function of
collector current.
handbook,⁴h⁵alfpage
d _im
(dB)
50
MBB383
handbook,⁴h⁵alfpage
d2
(dB)
50
MBB382
55
55
60
60
65
70
20
40
60
80
100
120
I _C (mA)
V_CE = 10 V; V_o = 750 mV; f_(p+q−r) = 793.25 MHz; T_amb = 25 °C.
Fig.10 Intermodulation distortion as a function of
collector current.
65
70
20
40
60
80
100
120
I _C (mA)
V_CE = 10 V; V_o = 50 dBmV; f_(p+q) = 450 MHz; T_amb = 25 °C.
Fig.11 Second order intermodulation distortion as
a function of collector current.
1999 Aug 24
7