BFG35_2015 Datasheet, PDF (6/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 4 GHz wideband transistor

Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFG35
1.2
han_Pd_tb_oo_tok, halfpage
(W)
1.0
0.8
0.6
0.4
0.2
0
0
50
MBB336
100
150
200
Ts ( ^o C)
Fig.4 Power derating curve.
handboo¹k,²h⁰alfpage
h _FE
80
MBB361
40
0
0
40
80
120
160
I _C (mA)
V_CE = 10 V; T_j = 25 °C.
Fig.5 DC current gain as a function of collector
current.
handbook, h³alfpage
C _re
(pF)
2
MBB381
1
0
0
4
8
12
16
20
VCE (V)
I_E = 0; f = 1 MHz; T_j = 25 °C.
Fig.6 Feedback capacitance as a function of
collector-emitter voltage.
1999 Aug 24
8
handbook, halfpage
fT
(GHz)
6
MBB357
4
2
0
0
40
80
120
160
IC (mA)
V_CE = 10 V; f = 500 MHz; T_j = 25 °C
Fig.7 Transition frequency as a function of
collector current.
6