BFG35_2015 Datasheet, PDF (10/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 4 GHz wideband transistor

Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFG35
handbook, full pagewidth
90o
120 ^o
60o
150 ^o
30o
180 ^o
0.1 0.2 0.3 0.4 0.5 0.6 _{0 o}
150 ^o
30o
120 ^o
60o
90o
MBB285
I_C = 100 mA; V_CE = 10 V; T_amb = 25 °C.
Fig.15 Common emitter reverse transmission coefficient (S₁₂).
handbook, full pagewidth
50
25
100
10
250
+j
0
–j
0
10
25
50
100
250
10
250
3 GHz
25
100
50
MBB379
I_C = 100 mA; V_CE = 10 V; T_amb = 25 °C; Z_o = 50 Ω.
Fig.16 Common emitter output reflection coefficient (S₂₂).
1999 Aug 24
10