BFG35_2015 Datasheet, PDF (4/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 4 GHz wideband transistor

Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFG35

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VBB
C3
C1 L1
input
75 Ω
R1
L2
L6 C4
R2
L3
DUT
VCC
C5
L5
C6
L4
output
75 Ω
C7
C2
R3 R4
MBB284
Fig.2 Intermodulation and second harmonic test circuit.
List of components (see test circuit)
DESIGNATION
DESCRIPTION
C1, C3, C5, C6 multilayer ceramic capacitor
C2, C7
multilayer ceramic capacitor
C4 (note 1)
miniature ceramic plate capacitor
L1
microstrip line
L2
microstrip line
L3 (note 1)
1.5 turns 0.4 mm copper wire
L4
microstripline
L5
L6 (note 1)
R1
R2 (note 1)
R3, R4
Ferroxcube choke
0.4 mm copper wire
metal film resistor
metal film resistor
metal film resistor
VALUE
10 nF
1 pF
10 nF
75 Ω
75 Ω
75 Ω
5 µH
≈25 nH
10 kΩ
200 Ω
27 Ω
DIMENSIONS
length 7mm;
width 2.5 mm
length 22mm;
width 2.5 mm
int. dia. 3 mm;
winding pitch 1 mm
length 19 mm;
width 2.5 mm
length 30 mm
CATALOGUE NO.
2222 590 08627
2222 851 12108
2222 629 08103
3122 108 20153
2322 180 73103
2322 180 73201
2322 180 73279
Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (ε_r = 2.2);
thickness ¹â„₁₆ inch; thickness of copper sheet ¹â„₃₂ inch.
1999 Aug 24
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