BFG35_2015 Datasheet, PDF (2/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 4 GHz wideband transistor

Philips Semiconductors
NPN 4 GHz wideband transistor
DESCRIPTION
PINNING
NPN planar epitaxial transistor
PIN
DESCRIPTION
page
mounted in a plastic SOT223
envelope, intended for wideband
1
emitter
amplifier applications. It features high ²
base
output voltage capabilities.
3
emitter
4
collector
Product specification
BFG35
4
1
Top view
2
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CEO
I_C
P_tot
h_FE
f_T
G_UM
V_o
collector-emitter voltage
open base
DC collector current
total power dissipation
DC current gain
up to T_s = 135 °C (note 1)
I_C = 100 mA; V_CE = 10 V; T_j = 25 °C
transition frequency
I_C = 100 mA; V_CE = 10 V;
f = 500 MHz; T_amb = 25 °C
maximum unilateral power gain I_C = 100 mA; V_CE = 10 V;
f = 500 MHz; T_amb = 25 °C
I_C = 100 mA; V_CE = 10 V;
f = 800 MHz; T_amb = 25 °C
output voltage
I_C = 100 mA; V_CE = 10 V;
d_im = −60 dB; R_L = 75 Ω;
f_(p+q−r) = 793.25 MHz; T_amb = 25 °C
MIN.
−
−
−
25
−
−
−
−
TYP.
−
−
−
70
4
15
11
750
MAX.
18
150
1
−
−
−
−
−
UNIT
V
mA
W
GHz
dB
dB
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to T_s = 135 °C (note 1)
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
−
−65
−
MAX. UNIT
25
V
18
V
2
V
150 mA
1
W
+150 °C
175 °C
1999 Aug 24
2