BFR93AR_2015 Datasheet, PDF (7/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 6 GHz wideband transistor

NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
4
NF
(dB)
3
2
1
mcd094
f = 2 GHz
1 GHz
500 MHz
4
NF
(dB)
3
2
I_C = 30 mA
10 mA
1
5 mA
mcd095
0
1
10
I_C (mA) ¹⁰²
0
10²
10³
f (MHz)
10⁴
V_CE = 8 V.
Fig 12. Minimum noise figure as a function of collector
current; typical values
V_CE = 8 V.
Fig 13. Minimum noise figure as a function of
frequency; typical values
−40
IMD
(dB)
−45
mbb263
−30
IMD2
(dB)
−35
mbb264
−50
−40
−55
−45
−60
−65
0
10
20
30
40
I_C (mA)
V_CE = 8 V; V_O = 425 mV (52.6 dBmV);
f_p + f_q − f_r = 793.25 MHz; T_amb = 25 °C.
Measured in MATV test circuit; see Figure 1.
Fig 14. Intermodulation distortion; typical values
−50
−55
0
10
20
30
40
I_C (mA)
V_CE = 8 V; V_O = 200 mV (46 dBmV);
f_p + f_q − f_r = 810 MHz; T_amb = 25 °C.
Measured in MATV test circuit; see Figure 1.
Fig 15. Second order intermodulation distortion;
typical values
BFR93AR_1
Product data sheet
Rev. 01 — 30 November 2006
© NXP B.V. 2006. All rights reserved.
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