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BFR93AR_2015 Datasheet, PDF (5/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 6 GHz wideband transistor
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NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
1
Cc
(pF)
0.8
mbb252
0.6
0.4
0.2
0
0
4
8
12
16
VCB (V)
IE = ie = 0 mA; f = 1 MHz; Tj = 25 °C.
Fig 4. Collector capacitance as a function of
collector-base voltage; typical values
30
gain
(dB)
20
mbb255
MSG
GUM
10
8
fT
(GHz)
6
mcd089
4
2
0
0
10
20
30
40
IC (mA)
VCE = 2 V; f = 500 MHz; Tj = 25 °C.
Fig 5. Transition frequency as a function of collector
current; typical values
30
gain
(dB)
20
mbb256
MSG
GUM
10
0
0
10
20
30 IC (mA) 40
VCE = 8 V; f = 500 MHz.
Fig 6. Gain as a function of collector current; typical
values
0
0
10
20
30
40
IC (mA)
VCE = 8 V; f = 1 GHz.
Fig 7. Gain as a function of collector current; typical
values
BFR93AR_1
Product data sheet
Rev. 01 — 30 November 2006
© NXP B.V. 2006. All rights reserved.
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