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| BFR93AR_2015 Datasheet, PDF (3/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 6 GHz wideband transistor | |||
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NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
6. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Tsp ⤠95 °C
[1] Tsp is the temperature at the solder point of the collector pin.
7. Characteristics
Typ
[1] 260
Unit
K/W
Table 7.
Symbol
ICBO
hFE
Cc
Characteristics
Parameter
collector-base cut-off current
DC current gain
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
unilateral power gain
NF
noise ï¬gure
VO
IMD2
output voltage
second-order intermodulation
distortion
Conditions
Min
IE = 0 A; VCB = 5 V
-
IC = 30 mA; VCE = 5 V; see Figure 3
40
IE = ie = 0 A; VCB = 5 V; f = 1 MHz;
-
see Figure 4
IC = ic = 0 A; VEB = 0.5 V; f = 1 MHz
-
IC = ic = 0 A; VCE = 5 V; f = 1 MHz;
-
Tamb = 25 °C
IC = 30 mA; VCE = 5 V; f = 500 MHz;
4.5
see Figure 5
IC = 30 mA; VCE = 8 V; Tamb = 25 °C; [1]
see Figure 6 to Figure 9
f = 1 GHz
-
f = 2 GHz
-
IC = 5 mA; VCE = 8 V; ÎS = Îopt;
Tamb = 25 °C; see Figure 12 and
Figure 13
f = 1 GHz
-
f = 2 GHz
-
[2][3] -
see Figure 15
[2][4] -
[1] GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log (---1----â------S----1--1----2-S--)-2--(1--1--2--â------S----2--2----2---)-- dB.
[2] Measured on the same crystal in a SOT37 package (BFR91A).
[3] IMD = â60 dB (DIN 45004B); IC = 30 mA; VCE = 8 V; RL = 75 â¦; Tamb = 25 °C;
Vp = VO at IMD = â60 dB; fp = 795.25 MHz;
Vq = VO â6 dB at fq = 803.25 MHz;
Vr = VO â6 dB at fr = 805.25 MHz;
measured at fp + fq â fr = 793.25 MHz
[4] IC = 30 mA; VCE = 8 V; RL = 75 â¦; Tamb = 25 °C;
Vp = 200 mV at fp = 250 MHz;
Vq = 200 mV at fp = 560 MHz;
measured at fp + fq = 810 MHz
BFR93AR_1
Product data sheet
Rev. 01 â 30 November 2006
Typ Max Unit
-
50 nA
90
-
0.7 -
pF
1.9 -
pF
0.6 -
pF
6
-
GHz
13
-
dB
7
-
dB
1.9 -
dB
3
-
dB
425 -
mV
â50 -
dB
© NXP B.V. 2006. All rights reserved.
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