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| BFR93AR_2015 Datasheet, PDF (1/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 6 GHz wideband transistor | |||
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BFR93AR
NPN 6 GHz wideband transistor
Rev. 01 â 30 November 2006
Product data sheet
1. Product proï¬le
1.1 General description
NPN wideband transistor in a plastic SOT23 package.
PNP complement: BFT93.
1.2 Features
I Very high power gain
I Low noise ï¬gure
I Very low intermodulation distortion
1.3 Applications
I RF wideband ampliï¬ers and oscillators
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VCBO
VCEO
IC
Ptot
Cre
fT
collector-base voltage open emitter
collector-emitter voltage open base
collector current
total power dissipation
feedback capacitance
transition frequency
Tsp ⤠95 °C
IC = 0 mA; VCE = 5 V; f = 1 MHz;
IC = 30 mA; VCE = 5 V;
f = 500 MHz;
GUM
unilateral power gain
IC = 30 mA; VCE = 8 V;
Tamb = 25 °C
f = 1 GHz
f = 2 GHz
NF
noise ï¬gure
VO
output voltage
IC = 5 mA; VCE = 8 V; f = 1 GHz;
ÎS = Îopt; Tamb = 25 °C
IMD = â60 dB; IC = 30 mA;
VCE = 8 V; RL = 75 â¦;
Tamb = 25 °C;
fp + fq â fr = 793.25 MHz
Min Typ
--
--
--
--
- 0.6
-6
- 13
-7
- 1.9
- 425
Max Unit
15 V
12 V
35 mA
300 mW
-
pF
-
GHz
-
dB
-
dB
-
dB
-
mV
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