BFR93AR_2015 Datasheet, PDF (4/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 6 GHz wideband transistor

NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
+V_BB
1.5 nF
10 kΩ
L2
75 Ω
input
L1
1 nF
270 Ω
L3
1 nF
1.5 nF
+V_CC
1 nF
75 Ω
output
DUT
3.3 pF
18 Ω
0.68 pF
mbb251
L1 = L3 = 5 µH choke.
L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.
Fig 1. Intermodulation distortion and second harmonic MATV test circuit
400
P_tot
(mW)
300
200
100
mra702
120
h_FE
80
40
mcd087
0
0
50
100
150
200
T_sp (°C)
Fig 2. Power derating curve
0
0
10
20 _{IC (mA)} 30
V_CE = 5 V; T_j = 25 °C.
Fig 3. DC current gain as a function of collector
current
BFR93AR_1
Product data sheet
Rev. 01 — 30 November 2006
© NXP B.V. 2006. All rights reserved.
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