BFR93AR_2015 Datasheet, PDF (2/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 6 GHz wideband transistor

NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
emitter
base
collector
Simplified outline Symbol
3
1
2
3
2
1
sym026
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BFR93AR
-
plastic surface-mounted package; 3 leads
Version
SOT23
4. Marking
Table 4. Marking
Type number
BFR93AR
Marking code
*R5
Description
* = p : made in Hong Kong
* = w : made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
T_sp ≤ 95 °C; see Figure 2
-
-
-
-
[1] _-
−65
-
[1] T_sp is the temperature at the solder point of the collector pin.
Max
15
12
2
35
300
+150
+175
Unit
V
V
V
mA
mW
°C
°C
BFR93AR_1
Product data sheet
Rev. 01 — 30 November 2006
© NXP B.V. 2006. All rights reserved.
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