IS63LV1024_07 Datasheet, PDF(9/18 Page) Integrated Silicon Solution, Inc – 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

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IS63LV1024_07 Datasheet, PDF (9/18 Pages) Integrated Silicon Solution, Inc – 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

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IS63LV1024

IS63LV1024L

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol

VDR

IDR

Parameter

VDD for Data Retention

Data Retention Current

Test Condition

See Data Retention Waveform

VDD = 2.0V, CE â¥ VDD â 0.2V

tSDR

Data Retention Setup Time See Data Retention Waveform

tRDR

Recovery Time

See Data Retention Waveform

Note 1: Typical values are measured at VDD = 3.0V, TA = 25OC and not 100% tested.

Options

IS63LV1024

IS63LV1024L

Min. Typ.(1) Max. Unit

2.0

3.6

0.5 10 mA

0.05 1.5

tRC

DATA RETENTION WAVEFORM (CE Controlled)

VDD

VDR

GND

tSDR

Data Retention Mode

tRDR

CE â¥ VDD - 0.2V

Integrated Silicon Solution, Inc. â www.issi.com â 1-800-379-4774

Rev. I

1/26/07

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