IS63LV1024_07 Datasheet, PDF (4/18 Pages) Integrated Silicon Solution, Inc – 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

IS63LV1024
IS63LV1024L
IS63LV1024 POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
-8 ns
-10 ns
-12 ns
Min. Max. Min. Max. Min. Max.
Unit
ICC1 VDD Operating VDD = Max., CE = VIL Com.
— 160
— 150
— 130
mA
Supply Current IOUT = 0 mA, f = Max. Ind. — 170
— 160
— 140
typ.⁽²⁾
— 105
— 95
— 75
Ind. (@15 ns)
— 90
ISB
TTL Standby
VDD = Max.,
Com. — 55
— 45
— 40
mA
Current
(TTL Inputs)
VIN = VIH or VIL
CE ≥ VIH, f = Max
Ind. — 55
— 45
— 40
ISB1 TTL Standby
VDD = Max.,
Com. — 25
— 25
— 25
mA
Current
VIN = VIH or VIL
Ind. — 30
— 30
— 30
(TTL Inputs)
CE ≥ VIH, f = 0
ISB2 CMOS Standby VDD = Max.,
Com. — 5
—5
—5
mA
Current
CE ≥ VDD – 0.2V,
Ind. — 10
— 10
— 10
typ.⁽²⁾
— 0.5
— 0.5
— 0.5
(CMOS Inputs) VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Notes:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.3V, TA = 25^oC. Not 100% tested.
IS63LV1024L POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
ICC1 VDD Operating
Supply Current
ISB
TTL Standby
Current
(TTL Inputs)
ISB1 TTL Standby
Current
(TTL Inputs)
ISB2 CMOS Standby
Current
(CMOS Inputs)
Test Conditions
VDD = Max., CE = VIL
IOUT = 0 mA, f = Max.
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = Max
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = 0
VDD = Max.,
CE ≥ VDD – 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
typ.⁽²⁾
Com.
Ind.
Com.
Ind.
Com.
Ind.
typ.⁽²⁾
-8 ns
Min. Max.
— 100
— 110
— 75
— 35
— 40
— 15
— 20
—1
— 1.5
— 0.05
-10 ns
Min. Max.
— 95
— 105
— 70
— 30
— 35
— 15
— 20
—1
— 1.5
— 0.05
-12 ns
Min. Max. Unit
— 90 mA
— 100
— 65
— 25 mA
— 30
— 15 mA
— 20
— 1 mA
— 1.5
— 0.05
Notes:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.3V, TA = 25^oC. Not 100% tested.
CAPACITANCE^(1,2)
Symbol
CIN
CI/O
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
Unit
6
pF
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. I
1/26/07