IS63LV1024_07 Datasheet, PDF (3/18 Pages) Integrated Silicon Solution, Inc – 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

IS63LV1024
IS63LV1024L
TRUTH TABLE
Mode
WE
CE
OE
Not Selected
(Power-down)
X
H
X
Output Disabled
H
L
H
Read
H
L
L
Write
L
L
X
I/O Operation
High-Z
High-Z
DOUT
DIN
VDD Current
ISB1, ISB2
ICC1, ICC2
ICC1, ICC2
ICC1, ICC2
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
VTERM
Terminal Voltage with Respect to GND
–0.5 to VDD + 0.5
V
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.0
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
VDD
3.3V ± 0.3V
3.3V ± 0.15V
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
Test Conditions
VDD = Min., IOH = –4.0 mA
VDD = Min., IOL = 8.0 mA
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Notes:
1. VIL = –3.0V for pulse width less than 10 ns.
Com.
Ind.
Com.
Ind.
Min.
Max.
Unit
2.4
—
V
—
0.4
V
2.2 VDD + 0.3
V
–0.3
0.8
V
–1
1
µA
–5
5
–1
1
µA
–5
5
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. I
1/26/07