IS61WV51216ALL Datasheet, PDF (8/20 Pages) Integrated Silicon Solution, Inc – 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61WV51216ALL
IS61WV51216BLL
IS64WV51216BLL
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
ICC
VDD Dynamic Operating VDD = Max.,
Supply Current
IOUT = 0 mA, f = fMAX
ICC1
ISB1
ISB2
Operating
Supply Current
VDD = Max.,
IOUT = 0 mA, f = 0
TTL Standby Current
(TTL Inputs)
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = 0
CMOS Standby
Current (CMOS Inputs)
VDD = Max.,
CE ≥ VDD – 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
Auto.
typ.⁽²⁾
Com.
Ind.
Auto.
Com.
Ind.
Auto.
Com.
Ind.
Auto.
typ.⁽²⁾
-8
Min. Max.
— 110
— 115
——
— 85
— 90
——
— 30
— 35
——
— 20
— 25
——
-10
Min. Max.
— 90
— 95
— 140
60
— 85
— 90
— 110
— 30
— 35
— 70
— 20
— 25
— 60
4
-20
Min. Max. Unit
— 50 mA
— 60
— 100
— 45 mA
— 55
— 90
— 30 mA
— 35
— 70
— 15 mA
— 20
— 60
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.0V, TA = 25^oC and not 100% tested.
8
Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
10/01/09