IS61WV51216ALL Datasheet, PDF (6/20 Pages) Integrated Silicon Solution, Inc – 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61WV51216ALL
IS61WV51216BLL
IS64WV51216BLL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 3.3V + 5%
Symbol Parameter
Test Conditions
VOH
Output HIGH Voltage
VDD = Min., IOH = –4.0 mA
VOL
Output LOW Voltage
VDD = Min., IOL = 8.0 mA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Note:
1. VIL(min.)=–0.3VDC;VIL(min.)=–2.0VAC(pulsewidth<10ns).Not100%tested.
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 2.4V-3.6V
Symbol Parameter
Test Conditions
VOH
Output HIGH Voltage
VDD = Min., IOH = –1.0 mA
VOL
Output LOW Voltage
VDD = Min., IOL = 1.0 mA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.
Min.
Max.
Unit
2.4
—
V
—
0.4
V
2
VDD + 0.3
V
–0.3
0.8
V
–1
1
µA
–1
1
µA
Min.
Max.
Unit
1.8
—
V
—
0.4
V
2.0 VDD + 0.3
V
–0.3
0.8
V
–1
1
µA
–1
1
µA
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 1.65V-2.2V
Symbol Parameter
Test Conditions
VDD
VOH
Output HIGH Voltage
IOH = -0.1 mA
1.65-2.2V
VOL
Output LOW Voltage
IOL = 0.1 mA
1.65-2.2V
VIH
Input HIGH Voltage
1.65-2.2V
VIL(1)
Input LOW Voltage
1.65-2.2V
ILI
Input Leakage
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Notes:
1. VIL(min.)= –0.3VDC; VIL(min.)= –2.0VAC(pulsewidth<10ns).Not100%tested.
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.
Min.
1.4
—
1.4
–0.2
–1
–1
Max.
—
0.2
VDD + 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
6
Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
10/01/09