IS62WV12816DALL Datasheet, PDF (7/17 Pages) Integrated Silicon Solution, Inc – 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62WV12816DALL/DBLL, IS65WV12816DALL/DBLL
READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol
Parameter
trc
Read Cycle Time
taa
Address Access Time
toha
Output Hold Time
tacs1/tacs2
CS1/CS2 Access Time
tdoe
OE Access Time
thzoe⁽²⁾
OE to High-Z Output
tlzoe⁽²⁾
OE to Low-Z Output
t t hzcs1/ hzcs2⁽²⁾ CS1/CS2 to High-Z Output
t t lzcs1/ lzcs2⁽²⁾ CS1/CS2 to Low-Z Output
tba
LB, UB Access Time
thzb
LB, UB to High-Z Output
tlzb
LB, UB to Low-Z Output
35 ns
Min. Max.
35
—
—
35
10
—
—
35
—
15
—
10
5
—
0
10
10
—
—
35
0
10
0
—
45 ns
Min. Max.
45
—
—
45
10
—
—
45
—
20
—
15
5
—
0
15
10
—
—
45
0
15
0
—
55 ns
Min. Max.
55
—
—
55
10
—
—
55
—
25
—
20
5
—
0
20
10
—
—
55
0
20
0
—
Notes:
1.  Test conditions and output loading conditions are specified in the AC Test Conditions and AC Test Loads (Figure 1).
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
7
Rev.  A
08/16/2011