IS62WV12816DALL Datasheet, PDF (4/17 Pages) Integrated Silicon Solution, Inc – 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62WV12816DALL/DBLL, IS65WV12816DALL/DBLL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
Vdd
Voh
Output HIGH Voltage
Ioh = -0.1 mA
Ioh = -1 mA
1.8V ± 10%
2.5-3.6V
Vol
Output LOW Voltage
Iol = 0.1 mA
Iol = 2.1 mA
1.8V ± 10%
2.5-3.6V
Vih
Input HIGH Voltage

1.8V ± 10%
2.5-3.6V
Vil
Input LOW Voltage
1.8V ± 10%
2.5-3.6V
Ili
Input Leakage
GND ≤ Vin ≤ Vdd
Ilo
Output Leakage
GND ≤ Vout ≤ Vdd, Outputs Disabled
Notes:
For IS62/65WV12816DALL:
Vil (min.) = -1.0V AC (pluse width < 10ns). Not 100% tested.
Vih (max.) = Vdd + 1.0V AC; (pluse width < 10ns). Not 100% tested.
For IS62/65WV12816DBLL:
Vil (min.) = -2.0V AC (pluse width < 10ns). Not 100% tested.
Vih (max.) = Vdd + 2.0V AC; (pluse width < 10ns). Not 100% tested.
Min.
1.4
2.2
—
—
1.4
2.2
–0.2
–0.2
–1
–1
Max.
—
—
0.2
0.4
Vdd + 0.2
Vdd + 0.3
0.4
0.6
1
1
Unit
V
V
V
V
V
V
V
V
µA
µA
CAPACITANCE⁽¹⁾
Symbol Parameter
Conditions
Max.
Cin
Input Capacitance
Vin = 0V
8
Cout
Input/Output Capacitance
Vout = 0V
10
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Unit
pF
pF
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
  Rev.  A
08/16/2011