IS66WV1M16EALL Datasheet, PDF (6/15 Pages) Integrated Silicon Solution, Inc – ULTRA LOW POWER PSEUDO CMOS STATIC RAM

IS66WV1M16EALL
IS66/67WV1M16EBLL
1.7V-1.95V POWER SUPPLY CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
Conditions
Device TYP.
MAX.
70ns
Unit
VDD Dynamic
ICC
Operating
Supply Current
VDD=Max.,IOUT=0mA,
f=fMAX , All inputs = 0.4V
or VDD – 0.2V
Com.
-
20
Ind.
-
25
mA
Auto
-
30
Operating
ICC1
Supply Current
VDD=Max.,CS1#=0.2V,
WE#= VDD – 0.2V,
f=1MHz
Com.
-
4
Ind.
-
4
mA
Auto
-
10
ISB1
TTL Standby Current
( TTL Inputs )
VDD=Max.,VIN=VIH or VIL,
CS1# = VIH, CS2=VIL ,
f=1MHz
Com.
-
0.6
Ind.
-
0.6
Auto
-
1
mA
ISB2
CMOS Standby Current
( CMOS Inputs )
VDD=Max.,
CS1# > VDD – 0.2V,
CS2 < 0.2V, VIN > VDD – 0.2V
or VIN < 0.2V, f=0
Com.
Ind.
Auto
-
-
-
100
120
150
uA
Notes:
1. Atf=fMAX, address and data inputs are cycling at the maximum frequency , f = 0 means no input lines change.
2.5V-3.6V POWER SUPPLY CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
Conditions
Device TYP
VDD Dynamic
ICC
Operating
Supply Current
VDD=Max.,IOUT=0mA,
f=fMAX , All inputs = 0.4V
or VDD – 0.3V
Com.
Ind.
Auto
Typ.(2)
-
-
-
Operating
ICC1
Supply Current
VDD=Max.,CS1#=0.2V,
WE#= VDD – 0.2V,
f=1MHz
Com.
-
Ind.
-
Auto
-
ISB1
TTL Standby Current
( TTL Inputs )
VDD=Max.,VIN=VIH or VIL,
CS1# = VIH, CS2=VIL ,
f=1MHz
Com.
-
Ind.
-
Auto
-
ISB2
CMOS Standby Current
( CMOS Inputs )
VDD=Max.,
CS1# > VDD – 0.2V,
CS2 < 0.2V, VIN > VDD – 0.2V
or VIN < 0.2V ,f=0
Com.
Ind.
Auto
Typ.⁽²⁾
-
-
-
MAX
55ns
25
28
35
15
5
5
10
0.6
0.6
1
100
130
150
75
Unit
mA
mA
mA
uA
Notes:
1. At f=fMAX, address and data inputs are cycling at the maximum frequency , f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.0V, Ta = 25 ºC , and not 100% tested.
Rev. 0A | October 2014
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