IS66WV1M16EALL Datasheet, PDF (5/15 Pages) Integrated Silicon Solution, Inc – ULTRA LOW POWER PSEUDO CMOS STATIC RAM

IS66WV1M16EALL
IS66/67WV1M16EBLL
CAPACITANCE
Symbol
Description
Conditions
MIN
C_IN
Input Capacitance
VIN = 0V
-
C_IO
Input/Output Capacitance (DQ)
Vout = 0V
-
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
MAX Unit
8
pF
10
pF
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall
Time
Input and Output
Timing and
Reference Level
Output Load
1.7V – 1.95V
( Unit )
0.4V to VDD – 0.2V
5ns
VREF
See Figures 1 and 2
2.5V – 3.6V
( Unit )
0.4V to VDD – 0.3V
5ns
VREF
See Figures 1 and 2
Symbol
R1(Ω)
R2(Ω)
VREF
VTM
1.7V – 1.95V
3070
3150
0.9V
1.8V
2.5V – 3.6V
1029
1728
1.4V
2.8V
AC TEST LOADS
R1
VTM
R1
VTM
OUTPUT
30 pF
Including
Jig and
scope
Figure 1
Rev. 0A | October 2014
OUTPUT
R2
5 pF
Including
Jig and
scope
Figure 2
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R2
5