IS66WV1M16EALL Datasheet, PDF (4/15 Pages) Integrated Silicon Solution, Inc – ULTRA LOW POWER PSEUDO CMOS STATIC RAM

IS66WV1M16EALL
IS66/67WV1M16EBLL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VTERM
Terminal Voltage with Respect to GND
TBIAS
Temperature Under BIAS
VDD
VDD Related to GND
TSTG
Storage Temperature
PT
Power Dissipation
Value
Unit
-0.2 to VDD + 0.3
V
-40 to +85
°C
-0.2 to +3.8
V
-65 to +150
°C
1.0
W
Notes:
Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only,
and functional operation of the device at these or any other conditions above those indicated in this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 2.5V-3.6V (IS66/67WV1M16EBLL)
Symbol Parameter
Test
VDD
Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
IoH = -1 mA
2.5-3.6V
VOL
Output LOW Voltage
IoL = 2.1 mA
2.5-3.6V
VIH
Input HIGH Voltage(1)
2.5-3.6V
VIL
Input LOW Voltage(1)
2.5-3.6V
ILI
Input Leakage
GND ≤ VIN ≤ VDD
ILo
Output Leakage
GND ≤ VOUT ≤ VDD,
Outputs Disabled
2.2
—
2.2
–0.2
–1
–1
—
V
0.4
V
VDD + 0.3
V
0.6
V
1
μA
1
μA
Notes:
1. VILL (min.) = –2.0V AC (pulse width < 10ns). Not 100% tested.
VIHH (max.) = VDD + 2.0V AC (pulse width < 10ns). Not 100% test
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 1.7V-1.95V(IS66WV1M16EALL)
Symbol Parameter
Test
VDD
Conditions
Min.
VOH
Output HIGH Voltage
VOL
Output LOw Voltage
VIH
Input HIGH Voltage(1)
VIL
Input LOw Voltage(1)
ILI
Input Leakage
ILo
Output Leakage
IOH = -0.1 mA 1.7-1.95V
IOL = 0.1 mA
1.7-1.95V
1.7-1.95V
1.7-1.95V
GND ≤ VIN ≤ VDD
GND ≤ VOUT ≤ VDD,
Outputs Disabled
1.4
—
1.4
–0.2
–1
–1
Max
.
—
0.2
VDD + 0.2
0.4
1
1
Unit
V
V
V
V
μA
μA
Notes:
1. VILL (min.) = –1.0V AC (pulse width < 10ns). Not 100% tested.
VIHH (max.) = VDD + 1.0V AC (pulse width < 10ns). Not 100% test
Rev. 0A | October 2014
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