IS66WV1M16EALL Datasheet, PDF (3/15 Pages) Integrated Silicon Solution, Inc – ULTRA LOW POWER PSEUDO CMOS STATIC RAM

IS66WV1M16EALL
IS66/67WV1M16EBLL
POWER UP INITIALIZATION
IS66WV1M16EALL and IS66/67WV1M16EBLL include an on-chip voltage sensor used to launch the power-up
initialization process. When VDD reaches a stable level at or above the VDD (min) the device will require 50μs
to complete its self-initialization process. During the initialization period, CS1# should remain HIGH. When initialize-
ation is complete, the device is ready for normal operation.
VDD( min)
VDD
0V
50 us
Device Initialization
Device for Normal Operation
TRUTH TABLE
Mode
WE# CS1# CS2
OE#
LB#
UB#
I/O0 –
I/O7
Not
X
H
X
X
X
H High-Z
Selected
X
X
L
X
X
X High-Z
I/O8 –
I/O15
High-Z
High-Z
Output
Disabled
H
H
X
L
H
H
L
X High-Z High-Z
L
H
H
X
L High-Z High-Z
L
H
X
H
H High-Z High-Z
Read
H
L
H
L
L
H
D^OUT
High-Z
H
L
H
L
H
L High-Z
D^OUT
H
L
H
L
L
L
D^OUT
D^OUT
Write
L
L
H
X
L
H
Din
High-Z
L
L
H
X
H
L High-Z
Din
L
L
H
X
L
L
Din
Din
VDD Current
ISB1,ISB2
ISB1,ISB2
ICC
ICC
ICC
I^CC
I^CC
I^CC
ICC
ICC
ICC
OPERATING RANGE (VDD)
Range
Ambient Temperature
Industrial
Automotive , A1
Automotive , A2
–40°C to +85°C
–40°C to +85°C
–40°C to +105°C
IS66WV1M16EALL
(70ns)
1.7V – 1.95V
–
–
IS66WV1M16EBLL
(55ns, 70ns)
2.5V – 3.6V
–
–
IS66WV1M16EBLL
(55ns, 70ns)
–
2.5V – 3.6V
2.5V – 3.6V
Rev. 0A | October 2014
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