IS64C6416 Datasheet, PDF (6/12 Pages) Integrated Silicon Solution, Inc – high-speed, 1,048,576-bit static RAM

IS64C6416
ISSI ^®
READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol
tRC
tAA
tOHA
tACE
tDOE
tHZOE⁽²⁾
tLZOE⁽²⁾
tHZCE⁽²
tLZCE⁽²⁾
tBA
tHZB
tLZB
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CE to High-Z Output
CE to Low-Z Output
LB, UB Access Time
LB, UB to High-Z Output
LB, UB to Low-Z Output
-15
Min. Max.
15 —
— 15
3—
— 15
—7
06
0—
06
3—
—7
06
0—
-20
Min. Max. Unit
20 —
ns
— 20
ns
3—
ns
— 20
ns
—9
ns
08
ns
0—
ns
08
ns
3—
ns
—9
ns
08
ns
0—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input
pulse levels of 0 to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not
100% tested.
3. Not 100% tested.
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
01/07/03