IS64C6416 Datasheet, PDF (4/12 Pages) Integrated Silicon Solution, Inc – high-speed, 1,048,576-bit static RAM

IS64C6416
ISSI ^®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
VOH
VOL
VIH
VIL
ILI
ILO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage⁽¹⁾
Input Leakage
Output Leakage
Test Conditions
VCC = Min., IOH = –4.0 mA
VCC = Min., IOL = 8.0 mA
GND ≤ VIN ≤ VCC
GND ≤ VOUT ≤ VCC, Outputs Disabled
Notes:
1. VIL (min.) = –3.0V for pulse width less than 10 ns.
Min.
2.4
—
2.5
–0.5
–2
–2
Max. Unit
—
V
0.4
V
VCC + 0.5 V
0.8
V
2
µA
2
µA
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
-15
-20
Min. Max. Min. Max.
Unit
ICC
Vcc Dynamic Operating VCC = Max.,
Supply Current
IOUT = 0 mA, f = MAX
A1
— 250 — —
mA
A2
——
— 255
A3
——
— 260
ISB1
TTL Standby Current
(TTL Inputs)
VCC = Max.,
VIN = VIH or VIL
CE > VIH , f = max
ISB2
CMOS Standby
VCC = Max.,
Current (CMOS Inputs) CE > VCC – 0.2V,
VIN > VCC – 0.2V, or
VIN ≤ 0.2V, f = 0
A1
— 50
——
mA
A2
——
— 55
A3
——
— 55
A1
—5
——
mA
A2
——
— 10
A3
——
— 15
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE⁽¹⁾
Symbol
CIN
COUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
Unit
6
pF
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
01/07/03