IS64C6416 Datasheet, PDF (3/12 Pages) Integrated Silicon Solution, Inc – high-speed, 1,048,576-bit static RAM

IS64C6416
ISSI ^®
TRUTH TABLE
Mode
WE
CE
OE
LB
UB
Not Selected
X
H
X
X
X
Output Disabled
H
L
H
X
X
X
L
X
H
H
Read
H
L
L
L
H
H
L
L
H
L
H
L
L
L
L
Write
L
L
X
L
H
L
L
X
H
L
L
L
X
L
L
I/O PIN
I/O0-I/O7 I/O8-I/O15 Vcc Current
1
High-Z
High-Z
ISB1, ISB2
High-Z
High-Z
High-Z
High-Z
ICC1, ICC2
2
DOUT
High-Z
High-Z
DOUT
ICC1, ICC2
DOUT
DIN
DOUT
High-Z
ICC1, ICC2
3
High-Z
DIN
DIN
DIN
4
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND –0.5 to +7.0 V
TSTG Storage Temperature
–65 to +150 °C
PT
Power Dissipation
1.5
W
IOUT
DC Output Current (LOW)
20
mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
OPERATING RANGE
Options
A1
A2
A3
Ambient Temperature
–40°C to +85°C
–40°C to +105°C
–40°C to +125°C
VCC
5V ± 10%
5V ± 10%
5V ± 10%
5
6
7
8
9
10
11
12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. 00A
01/07/03