IS64C6416 Datasheet, PDF (1/12 Pages) Integrated Silicon Solution, Inc – high-speed, 1,048,576-bit static RAM

IS64C6416
FEATURES
• High-speed access time: 15 and 20 ns
• CMOS low power operation
• TTL compatible interface levels
• Single 5V ± 10% power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial temperature available
• Available in 44-pin SOJ package and
44-pin TSOP (Type II)
FUNCTIONAL BLOCK DIAGRAM
ISSI ^®
ADVANCED INFORMATION
JANUARY 2003
DESCRIPTION
The ISSI IS64C6416 is a high-speed, 1,048,576-bit static RAM
organized as 65,536 words by 16 bits. It is fabricated using
ISSI's high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design techniques,
yields access times as fast as 10 ns with low power consump-
tion.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down
with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS64C6416 is packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP (Type II).
A0-A15
DECODER
64K x 16
MEMORY ARRAY
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
CONTROL
WE
CIRCUIT
UB
LB
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any
time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev. 00A
01/07/03