IS61WV51232ALL Datasheet, PDF (5/19 Pages) Integrated Silicon Solution, Inc – 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61WV51232ALL/ALS
IS61WV51232BLL/BLS
IS64WV51232BLL/BLS
HIGH SPEED
OPERATING RANGE (VDD) (IS61WV51232ALL)
Range
Commercial
Industrial
Automotive
Ambient Temperature
0°C to +70°C
–40°C to +85°C
–40°C to +125°C
VDD
1.65V-2.2V
1.65V-2.2V
1.65V-2.2V
Speed
20ns
20ns
20ns
OPERATING RANGE (VDD) (IS61WV51232BLL)⁽¹⁾
Range
Ambient Temperature
VDD (8 nS)¹
VDD (10 nS)¹
Commercial
0°C to +70°C
3.3V + 5%
2.4V-3.6V
Industrial
–40°C to +85°C
3.3V + 5%
2.4V-3.6V
Note:
1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the range of 3.3V + 5%, the device meets
8ns.
OPERATING RANGE (VDD) (IS64WV51232BLL)
Range
Ambient Temperature
Automotive
–40°C to +125°C
VDD (10 nS)
2.4V-3.6V
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
ICC
VDD Dynamic Operating VDD = Max.,
Supply Current
IOUT = 0 mA, f = fMAX
ICC1
ISB1
ISB2
Operating
Supply Current
VDD = Max.,
IOUT = 0 mA, f = 0
TTL Standby Current
(TTL Inputs)
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = 0
CMOS Standby
Current (CMOS Inputs)
VDD = Max.,
CE ≥ VDD – 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
Auto.
typ.⁽²⁾
Com.
Ind.
Auto.
Com.
Ind.
Auto.
Com.
Ind.
Auto.
typ.⁽²⁾
-8
Min. Max.
— 110
— 115
——
— 85
— 90
——
— 30
— 35
——
— 20
— 25
——
-10
Min. Max.
— 90
— 95
— 140
60
— 85
— 90
— 110
— 30
— 35
— 70
— 20
— 25
— 60
4
-20
Min. Max. Unit
— 50 mA
— 60
— 100
— 45 mA
— 55
— 90
— 30
mA
— 35
— 70
— 20
mA
— 25
— 60
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.0V, TA = 25^oC and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com
5
Rev. 00B
04/23/08