IS61WV51232ALL Datasheet, PDF (16/19 Pages) Integrated Silicon Solution, Inc – 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61WV51232ALL/ALS
IS61WV51232BLL/BLS
IS64WV51232BLL/BLS
DATA RETENTION SWITCHING CHARACTERISTICS (HIGH SPEED) (IS61WV51232ALL/BLL)
Symbol Parameter
Test Condition
VDR
VDD for Data Retention
See Data Retention Waveform
IDR
Data Retention Current
VDD = 1.2V, CE ≥ VDD – 0.2V
Ind.
Auto.
tSDR
Data Retention Setup Time See Data Retention Waveform
tRDR
Recovery Time
See Data Retention Waveform
Min. Max. Unit
1.2 3.6 V
—
25 mA
—
60
0
— ns
tRC
— ns
DATA RETENTION WAVEFORM (CE Controlled)
VDD
1.65V
1.4V
VDR
CE
GND
tSDR
Data Retention Mode
tRDR
CE ≥ VDD - 0.2V
16
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00B
04/23/08