IS61LV6416 Datasheet, PDF (4/16 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY

IS61LV6416
IS61LV6416L
ISSI ^®
IS61LV6416
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
-8 ns
Min. Max.
-10 ns
Min. Max.
-12 ns
Min. Max. Unit
ICC
VDD Dynamic Operating VDD = Max.,
Com.
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
typ.⁽²⁾
— 140
— 150
— 105
— 120
— 130
— 95
— 100
mA
— 110
— 75
ISB1
TTL Standby Current VDD = Max.,
(TTL Inputs)
VIN = VIH or VIL
CE ≥ VIH , f = 0
Com.
Ind.
ISB2
CMOS Standby
VDD = Max.,
Com.
Current (CMOS Inputs) CE ≥ VDD – 0.2V,
Ind.
VIN ≥ VDD – 0.2V, or
typ.⁽²⁾
VIN ≤ 0.2V, f = 0
— 15
— 20
—5
— 10
— 0.5
— 15
— 20
—5
— 10
— 0.5
— 15
mA
— 20
—5
mA
— 10
— 0.5
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD=3.3V, TA=25^oC. Not 100% Tested.
IS61LV6416L
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
-8 ns
-10 ns
Min. Max.
Min. Max.
Unit
ICC
VDD Dynamic Operating VDD = Max.,
Com.
— 100
— 95
mA
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
— 110
— 105
typ.⁽²⁾
— 75
— 70
ISB1
TTL Standby Current VDD = Max.,
Com.
— 15
— 15
mA
(TTL Inputs)
VIN = VIH or VIL
Ind.
— 20
— 20
CE ≥ VIH , f = 0
ISB2
CMOS Standby
VDD = Max.,
Com.
—1
—1
mA
Current (CMOS Inputs) CE ≥ VDD – 0.2V,
Ind.
— 1.5
— 1.5
VIN ≥ VDD – 0.2V, or
typ.⁽²⁾
— 0.05
— 0.05
VIN ≤ 0.2V, f = 0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD=3.3V, TA=25^oC. Not 100% Tested.
CAPACITANCE⁽¹⁾
Symbol
CIN
COUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
6
8
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Unit
pF
pF
4
Integrated Silicon Solution, Inc.
Rev. I
11/22/05