IS61LV6416 Datasheet, PDF (3/16 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY

IS61LV6416
IS61LV6416L
ISSI ^®
TRUTH TABLE
Mode
WE
CE
OE
LB
UB
Not Selected
X
H
X
X
X
Output Disabled
H
L
H
X
X
X
L
X
H
H
Read
H
L
L
L
H
H
L
L
H
L
H
L
L
L
L
Write
L
L
X
L
H
L
L
X
H
L
L
L
X
L
L
I/O PIN
I/O0-I/O7 I/O8-I/O15 VDD Current
1
High-Z
High-Z
ISB1, ISB2
High-Z
High-Z
ICC
High-Z
High-Z
DOUT
High-Z
ICC
2
High-Z
DOUT
DOUT
DOUT
DIN
High-Z
ICC
High-Z
DIN
3
DIN
DIN
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
4
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND –0.5 to VDD+0.5
V
TSTG Storage Temperature
–65 to +150
°C
5
PT
Power Dissipation
1.5
W
IOUT
DC Output Current (LOW)
20
mA
Note:
6
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
7
OPERATING RANGE
8
Range
Ambient Temperature
VDD (8,10 ns)
VDD (12 ns)
Commercial
0°C to +70°C
3.3V+10%,-5%
3.3V ± 10%
Industrial
–40°C to +85°C
3.3V+10%,-5%
3.3V ± 10%
9
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
VOH
VOL
VIH
VIL
ILI
ILO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage⁽¹⁾
Input Leakage
Output Leakage
Test Conditions
VDD = Min., IOH = –4.0 mA
VDD = Min., IOL = 8.0 mA
GND ≤ VIN ≤ VDD
GND ≤ VOUT ≤ VDD, Outputs Disabled
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc.
Rev. I
11/22/05
10
Min.
Max.
Unit
2.4
—
—
0.4
V
V ₁₁
2
VDD + 0.3
V
–0.3
0.8
–2
2
V
µA 12
–2
2
µA
3