IS61QDB22M18 Datasheet, PDF (1/27 Pages) Integrated Silicon Solution, Inc – 36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 2) Synchronous SRAMs

36 Mb (1M x 36^. & 2M x 18)
QUAD (Burst of 2) Synchronous SRAMs
ISSI^®
JULY 2006
Features
• 1M x 36 or 2M x 18.
• On-chip delay-locked loop (DLL) for wide data
valid window.
• Separate read and write ports with concurrent
read and write operations.
• Synchronous pipeline read with early write oper-
ation.
• Double data rate (DDR) interface for read and
write input ports.
• Fixed 2-bit burst for read and write operations.
• Clock stop support.
• Two input clocks (K and K) for address and con-
trol registering at rising edges only.
• Two input clocks (C and C) for data output con-
trol.
• Two echo clocks (CQ and CQ) that are delivered
simultaneously with data.
• +1.8V core power supply and 1.5, 1.8V V_DDQ,
used with 0.75, 0.9V V_REF.
• HSTL input and output levels.
• Registered addresses, write and read controls,
byte writes, data in, and data outputs.
• Full data coherency.
• Boundary scan using limited set of JTAG 1149.1
functions.
• Byte write capability.
• Fine ball grid array (FBGA) package
- 15mm x 17mm body size
- 1mm pitch
- 165-ball (11 x 15) array
• Programmable impedance output drivers via 5x
user-supplied precision resistor.
Description
The 36Mb IS61QDB21Mx36 and
IS61QDB22Mx18 are synchronous, high-perfor-
mance CMOS static random access memory
(SRAM) devices. These SRAMs have separate I/Os,
eliminating the need for high-speed bus turnaround.
The rising edge of K clock initiates the read/write
operation, and all internal operations are self-timed.
Refer to the Timing Reference Diagram for Truth
Table on page 8 for a description of the basic opera-
tions of these SRAMs.
The input address bus operates at double data rate.
The following are registered internally on the rising
edge of the K clock:
• Read address
• Read enable
• Write enable
• Byte writes
• Data-in for early writes
The following are registered on the rising edge of
the K clock:
• Write address
• Byte writes
• Data-in for second burst addresses
Byte writes can change with the corresponding data-
in to enable or disable writes on a per-byte basis. An
internal write buffer enables the data-ins to be regis-
tered half a cycle earlier than the write address. The
first data-in burst is clocked at the same time as the
write command signal, and the second burst is timed
to the following rising edge of the K clock.
During the burst read operation, the data-outs from
the first burst are updated from output registers off
the second rising edge of the C clock (1.5 cycles
later). The data-outs from the second burst are
updated with the third rising edge of the C clock. The
K and K clocks are used to time the data-outs when-
ever the C and C clocks are tied high.
The device is operated with a single +1.8V power
supply and is compatible with HSTL I/O interfaces.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. B
06/29/06