RHLG77110 Datasheet, PDF (9/9 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB

Pre-Irradiation
IRHLG77110, 2N7612M1
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 6.6mH
Peak IL = 1.8A, VGS = 10V
 ISD ≤ 1.8A, di/dt ≤ 497A/µs,
VDD ≤ 100V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — MO-036AB
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Data and specifications subject to change without notice. 03/2008
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