RHLG77110 Datasheet, PDF (4/9 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB

IRHLG77110, 2N7612M1
Pre-Irradiation
10
VGS
TOP
10V
5.0V
4.5V
3.0V
2.75V
2.5V
2.25V
BOTTOM 2.0V
1
2.0V
0.1
0.1
60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
VGS
TOP
10V
5.0V
4.5V
3.0V
2.75V
2.5V
2.0V
2.25V
BOTTOM 2.0V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
10
TJ = 150°C
TJ = 25°C
1
0.1
2
VDS = 50V
60µs PU¹L⁵SE WIDTH
2.2
2.4
2.6
2.8
3
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
2.5
ID = 1.8A
2.0
1.5
1.0
0.5
VGS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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