RHLG77110 Datasheet, PDF (6/9 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB

IRHLG77110, 2N7612M1
Pre-Irradiation
1600
1400
1200
1000
800
600
400
200
0
1
VGS = 0V, f = 1 MHz
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID = 1.8A
10
8
VDS = 80V
VDS = 50V
VDS = 20V
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 17
0
0
4
8
12 16 20 24
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
2
1
TJ = 150°C
0.1
TJ = 25°C
0.01
0
VGS = 0V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-to-Drain Diode
Forward Voltage
6
1.5
1
0.5
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current Vs.
Case Temperature
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