RHLG77110 Datasheet, PDF (3/9 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB

PRraed-IirartaiodniaCtiohnaracteristics
IRHLG77110, 2N7612M1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ (Per Die)
BV_DSS
VGS(th)
I_GSS
I_GSS
I_DSS
R_DS(on)
R_DS(on)
Parameter
Up to 300K Rads (Si)¹
Min
Max
Drain-to-Source Breakdown Voltage 100
Gate Threshold Voltage
1.0
Gate-to-Source Leakage Forward
—
Gate-to-Source Leakage Reverse
—
Zero Gate Voltage Drain Current
—
Static Drain-to-Source „
On-State Resistance (TO-39)
—
Static Drain-to-Source On-state „
Resistance (MO-036AB)
—
—
2.0
100
-100
10
0.25
0.22
Units
V
nA
µA
Ω
Ω
Test Conditions
V_GS = 0V, I_D = 250µA
VGS = V_DS, I_D = 250µA
V_GS = 10V
V_GS = -10V
V_DS= 80V, V_GS=0V
VGS = 4.5V, I_D = 1.1A
VGS = 4.5V, I_D = 1.1A
V_SD
Diode Forward Voltage „
1. Part numbers IRHLG77110, IRHLG73110
—
1.2
V
VGS = 0V, I_D = 1.8A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm²)) (MeV) (µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V
-1V
-2V
-4V
-5V
-6V
-7V
-8V
Br
37
305
39
100
100
100
100
100
100 100 100
I
60
370
34
100
100
100
100
100
100
-
-
Au
84
390
30
100
100
100
100
100
-
-
-
120
100
80
Br
60
I
40
Au
20
0
0 -1 -2 -3 -4 -5 -6 -7 -8
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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