RHLG77110 Datasheet, PDF (2/9 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB

IRHLG77110, 2N7612M1
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage 100
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
1.0
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
—
gfs
Forward Transconductance
3.0
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td_(on)
tr
td_(off)
tf
LS + LD
Gate-to-Source Leakage Forward
—
Gate-to-Source Leakage Reverse
—
Total Gate Charge
—
Gate-to-Source Charge
—
Gate-to-Drain (‘Miller’) Charge
—
Turn-On Delay Time
—
Rise Time
—
Turn-Off Delay Time
—
Fall Time
—
Total Inductance
—
Ciss
Input Capacitance
—
Coss
Output Capacitance
—
Crss
Reverse Transfer Capacitance
—
Rg
Gate Resistance
—
Typ Max Units
Test Conditions
——
V
VGS = 0V, ID = 250µA
0.11 — V/°C Reference to 25°C, ID = 1.0mA
— 0.22 Ω
VGS = 4.5V, ID = 1.1A _Ã
— 2.0 V
-4.4 — mV/°C
VDS = VGS, ID = 250µA
—— S
— 1.0
— 10 µA
— 100
— -100 ^nA
— 15
— 2.5 nC
— 6.0
VDS = 10V, IDS = 1.1A Ã
VDS= 80V ,VGS= 0V
VDS = 80V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 1.8A
VDS = 50V
— 15
— 20 ^ns
— 65
VDD = 50V, ID = 1.8A,
VGS = 4.5V, RG = 7.5Ω
— 25
10 —
Measured from Drain lead (6mm /0.25in
nH _{from pack.) to Source lead (6mm/0.25in}
from pack.)with Source wire internally
bonded from Source pin to Drain pad
653 —
119 — pF
VGS = 0V, VDS = 25V
f = 1.0MHz
2.7 —
16 —
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode) — — 1.8 _A
ISM Pulse Source Current (Body Diode) À
— — 7.2
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 100 ns
QRR Reverse Recovery Charge
— — 223 nC
Tj = 25°C, IS = 1.8A, VGS = 0V Ã
Tj = 25°C, IF = 1.8A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
— — 90 °C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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