RHLG77110 Datasheet, PDF (5/9 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB

Pre-Irradiation
IRHLG77110, 2N7612M1
0.5
ID = 1.8A
0.4
TJ = 150°C
0.3
0.2
TJ = 25°C
0.1
0 1 2 3 4 5 6 7 8 9 10 11
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
0.4
0.35
TJ = 150°C
0.3
0.25
0.2
TJ = 25°C
0.15
Vgs = 4.5V
0.1
0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5
ID, Drain Current (A)
Fig 6. Typical On-Resistance Vs
Drain Current
130
ID = 1.0mA
120
110
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
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2.5
2.0
1.5
1.0
ID = 50µA
ID = 250µA
0.5
ID = 1.0mA
ID = 150mA
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5